Consequences of an algorithm for bridged graphs

Chepoi showed that every breadth first search of a bridged graph produces a cop-win ordering of the graph. We note here that Chepoi's proof gives a simple proof of the theorem that G is bridged if and only if G is cop-win and has no induced cycle of length four or five, and that this characterization together with Chepoi's proof reduces the time complexity of bridged graph recognition. Specifically, we show that bridged graph recognition is equivalent to (C₄,C₅)-free graph recognition, and reduce the best known time complexity from O(n⁴) to O(n^3.376).     

High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors

In this paper we report studies on normal incidence, InAs/In_0.15Ga_0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In_0.15Ga_0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of V_b=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, V_b=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed.     

低速二维流动的粒子仿真研究

本文运用信息保存法对低速二维的流动现象进行模拟，考察了低速条件下的有限平板绕流以及微槽道气体流动问题。研究表明：在对低速流动的模拟过程中，运用IP法在能够获得较好的结果的同时，具有比DSMC方法更高的计算效率。     

Hα Emission Imaging during Supersonic Molecular Beam Injection by CCD Photograph

There are several fuelling methods for tokamak plasma： pellet injection （PI）, gas puffing （GP）, neutral beam injection （NBI） and supersonic molecular beam injection （SMBI） .SMBI has been created in the Southwestern Institute of Physics, China.     

Dispersion analysis of the least‐squares finite‐element shallow‐water system

The frequency or dispersion relation for the least‐squares mixed formulation of the shallow‐water equations is analysed. We consider the use of different approximation spaces corresponding to co‐located and staggered meshes, respectively. The study includes the effect of Coriolis, and the dispersion properties are compared analytically and graphically with those of the mixed Galerkin formulation. Numerical solutions of a test problem to simulate slow Rossby modes illustrate the theoretical results. Copyright © 2003 John Wiley & Sons, Ltd.     

Kinetics of the reactions of the IO radical with dimethyl sulfide,methanethiol, ethylene,and propylene

The reactions of IO radicals with CH₃SCH₃, CH₃SH, C₂H₄, and C₃H₆ have been studied using the discharge flow method with direct detection of IO radicals by mass spectrometry. The absolute rate constants obtained at 298 K are the following: IO + CH₃SCH₃ → products (1): k₁ = (1.5 ± 0.2) × 10^?14; IO + CH₃SH → products (2): k₂ = (6.6 ± 1.3) × 10^?16; IO + C₂H₄ →products (3): k₃ < 2 × 10^?16; IO + C₃H₆ → products (4): k₄ < 2 × 10^?16 (units are cm³ molecule^?1 s^?1). CH₃S(O)CH₃ and HOI were found as products of reactions (1) and (2), respectively. The present lower value of k₁ compared to our previous determination is discussed.     

The ALTO project at IPN-Orsay

The availability of both a tandem deuteron beam and a linac electron beam, the latter converted into Bremsstrahlung, at the new ALTO facility at IPN-Orsay offers a unique opportunity to compare the performance of a laser ion guide under different regimes. The ALTO accelerator has delivered its first electron beam at the end of 2005 and a design for a gas-cell prototype is being studied.